4N25VM
Manufacturer:
On Semiconductor
Mfr.Part #:
4N25VM
Datasheet:
Description:
Phototransistor DIP-6 Through Hole Operating Supply Voltage:1.2 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 100 °C |
| Min Operating Temperature | -40 °C |
| Collector Emitter Breakdown Voltage | 100 V |
| Power Dissipation | 270 mW |
| Rise Time | 2 µs |
| Fall Time | 2 µs |
| Collector Emitter Voltage (VCEO) | 100 V |
| Dark Current | 1 nA |
| Packaging | Tube |
| Collector Emitter Saturation Voltage | 500 mV |
| Operating Supply Voltage | 1.2 V |
| RoHS | Compliant |
Stock: 12
Distributors
pcbx
pcbxUnit Price$0.45055
Ext.Price$0.45055
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.45055 | $0.45055 |
| 10 | $0.31376 | $3.13760 |
| 25 | $0.28289 | $7.07225 |
| 50 | $0.25506 | $12.75300 |
| 100 | $0.22997 | $22.99700 |
| 300 | $0.20174 | $60.52200 |
| 500 | $0.17697 | $88.48500 |
| 1000 | $0.16500 | $165.00000 |
| 3000 | $0.15532 | $465.96000 |
| 5000 | $0.14620 | $731.00000 |
| 10000 | $0.13936 | $1393.60000 |